Study of vanadium doped ZnO thin films prepared by dc reactive magnetron sputtering at different pressures

Wang, Liwei1; Wang, Liwei1; Wang, Liwei2; Meng, Lijian1; Meng, Lijian1; Teixeira, Vasco1; Placido, Frank3; Xu, Zheng2 1Portugal; 2China; 3United Kingdom

Vanadium doped ZnO films were deposited onto glass substrates at different sputtering pressures by dc reactive magnetron sputtering using a zinc target. The effect of the sputtering pressures (5*10-3 -- 3*10-2 mbar) on structural properties of the deposited films have been studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results of XRD show that all the films have a ZnO wurtzite structure and grow mainly with c-axis orientation. The residual stress in the deposited films has been estimated by fitting the XRD results. The optical properties of the films were studied by measuring the transmittance. The optical constants (refractive index and extinction coefficient) have been obtained by fitting the transmittance. The optical band gap is also calculated. All the results are discussed in relation with the sputtering pressure and the doping of the vanadium.

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