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Complex oxide thin film found various applications in microelectronics, optics and optoelectronics. For the preparation of complex oxide thin films, a novel liquid source MOCVD system was developed. A vaporizer consists of ultrasonic atomizer and heated vaporization chamber is used to vaporize liquid metal-organic (MO) sources and supply reaction chamber with vaporized sources. In the reaction chamber, oxidation gas is mixed with the vaporized precursors. The mixture is ionized with a RF power. The RF plasma is generated to promote the thermal decomposition of the MO vapors and the reaction between the oxidation gas and the decomposed MO vapors. Two types of ultrasonic atomizers were compared in terms of their atomization efficiency and source delivery rate controllability. A key advantage of the system is that relatively cheap 2-MOE MO sols can be used as the sources. As an example of applications, the liquid source MOCVD system was used to deposit PZT films on Pt/Ti/SiO2/Si substrate. |