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Interfacial thermal resistance is an important factor which has a considerable effect on the thermal conduction of electronic devices. However, reported data on interfacial thermal resistance are sparse as a result of a lack of efficient measurement methods. We developed a new analytical and measurement method for the determination of the interfacial thermal resistance between a metal and a dielectric material by using a technique involving periodic Joule (ohmic) heating and thermo-reflectance. The principle is based on a one-dimensional model of heat conduction in a two-layered system, taking into account the interfacial thermal resistance. By using this method, the interfacial thermal resistance between sputtered Au films and SiO2 substrates has been measured. The interfacial thermal resistance was found to be strongly affected by coating conditions such as sputter power, temperature of substrate and roughness of substrate surface, etc. We also calculated the interfacial thermal resistance by diffusion mismatch model. The minimum value obtained in experiments was in good agreement with the data calculated. |