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Recently, the organic chemistry has introduced a broad class of new organosilicon materials - ranging from disordered amorphous, to three dimensional silicon systems - as are polysilenes, polysilanes and polysilynes with a wide complexity of chemical composition, structure and resulting properties. The top of this development marks the occurrence of organosilicon nanostructural materials. Scientific and technical interest in organosilicon materials is based on the presence of the Si-Si ó conjugated system with electron delocalization as the result of a resonance interaction of sp3 orbitals on the adjoining silicon atoms accounting for their unique physical and chemical properties. Organosilicon are considered as a future charge-transport media material, photo resists in microelectronics, heat sensors, photoconductors, wave-guides and non-linear optical materials.
The aim of our work is to elucidate the degradation mechanisms in polysilanes, especially one-dimensional polysilylenes, with respect to the devise of suitable resists for silicon industrial nanotechnologies. For these purpose we used the methods of photoelectron spectroscopy, UPS (He I induced electron spectra) and XPS (Mg Ká radiation). Films of aryl-substituted polysilylanes, poly[methyl(phenyl)silylene] (PMPSi) were prepared by casting from toluene solution under protective atmosphere and transported into photoelectron spectrometer ADES-400. Photoelectron spectra were recorded from the pristine PMPSi surface and after in-situ electron irradiation.
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