In-situ electrical characterization of ultra thin Pt films grown by dc
magnetron sputtering on SiO2
Agustsson, J. S.1; Ingason, A. S.1; Gylfason, K. B.2; Johnsen , K.1; Gudmundsson, J. T.1; Olafsson, S.1 1Iceland; 2Sweden
We report on the preparation of ultra thin platinum Pt films grown by magnetron sputtering on thermally oxidized Si (100) substrates. The resistance of the films was monitored during growth in-situ using a custom built four--point probe setup. The minimum thickness of a continuous layer was determined for various growth temperatures and found to increase as the growth temperature is increased, from 1.3 nm for films grown at room temperature to 1.8 nm for films grown at 250 C. Also the film electrical resistance increases with increasing growth temperature. Furthermore, the film electrical resitance at various stages during growth was explored with varying temperature and frequency. We compare the resistivity of the films to a combination of the Fuch-Sondheimer and the Mayadas-Shatzkes models, assuming a thickness dependence of grain size.