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A novel method, with supercritical fluids (SCF) technology, is proposed to effectively improve the properties of low-temperature-deposited aluminum oxide dielectric films. In this paper, 270nm aluminum oxide (AlOx) films are fabricated by electron gun system at room temperature, and replacing the conventional high temperature annealing with supercritical fluids treatment at 150°C for improving the quality of AlOx film. After the proposed process, the absorption peaks of Al-O and Al-OH bonding apparently increase form Fourier transformation infrared spectroscopy (FTIR) measurement. The leakage current density of low-temperature-deposited AlOx film is cut down form 1×10-5 to 1×10-7A/cm2 at electric field = 3 MV/cm, and related to the pressure of supercritical fluids. Moreover, the dielectric constant raise form 6.6 to 10.7 after supercritical fluids treatment. |