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Nanocrystalline InN thin films were fabricated on (100) natural-oxidized silicon wafers by reactive pulsed magnetron sputtering. Effects of substrate temperature and N2 flow on the microstructure and morphology of InN films were investigated by using field emission scanning electron microscope, X-ray diffraction and atomic force microscopy. The columnar structures were observed by field emission scanning electron microscopy. X-ray diffraction analysis revealed that InN films have (002) and (103) phases as substrate temperature is below 200 ¢J. When the substrate temperature is increased, the InN film is preferred orientation along (002). The surface morphology was analyzed by atomic force microscopy. The average roughness of InN film is 0.597 nm as substrate temperature is 300 ¢J. We found that the average roughness of all films was below 1 nm and it was decreased with increasing N2 flow. |