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TaN thin films have been selectively deposited on Si(100) substrates in the temperature range of 400 - 500 oC by combination of micro-contact printing (µCP) and metal-organic chemical vapor deposition (MOCVD) methods. The patterned Si(100) substrates were initially fabricated with the self-assembled monolayers (SAMs) using an organic molecule such as octadecyltrichlorosilane (OTS) by µCP method. Ta(N(Me)(Et))3(NtBu) was used as the precursors for the growth of TaN thin films. For film growth, NH3 was applied as carrier and bubbler gas. For a selective growth study, we characterized the as-grown films with optical microscope (OM), micro-Raman spectrometer, atomic force microscope (AFM), scanning electron microscope (SEM), and alpha-step profiler. In the beginning of film deposition TaN thin film preferred to grow on bare silicon surface area rather that OTS patterned area due to hydrophilicity of silicon surface. With increasing deposition time, however, we found that the selectivity of TaN thin film depended on the deposition time. Because at above 400 oC the hydrophobic characteristic of OTS SAMs surface could slowly change as the deposition time was last over a certain time. Also C-V and I-V characteristics of Al / TaN /p-Si diode structures were measured. The dielectric constant and the leakage current density were approximately 4.6 and 10-4A/cm2, respectively, indicating that the deposited TaN thin film had a conductive characteristic. |