Characterization of metal/organic/silicon devices using ballistic electron emission microscopy and in situ IV measurements
Goh, K. E. J.; Troadec, C.; Zheng, Y.; Kunardi, L. Singapore
We present a study of the metal/organic/silicon device using ballistic electron emission microscopy in combination with in situ IV measurements in a home-made scanning tunneling microscope at room temperature. The characteristics of Au/Organic/Si diodes are compared with the well-known Au/Si interface diode and the interface properties that can be extracted will be discussed. We address the effectiveness of such a characterization technique and discuss its relevance to the fabrication of molecular devices like organic light emitting diodes, photodiodes and transistors.