Comparative study of electrical properties of nano to polycrystaline diamond films

Tibor, Izak1; Marian, Vojs1; Alexander, Kromka2; Jarmila, Skriniarova1; Marian, Vesely1; Miroslav, Michalka1; Tomas, Kovacik1; Jaroslav, Kovac1 1Slovakia; 2Czech Republic

Low-resistance ohmic or Schotky contacts between diamond and metal is primary goal of electronic devices and microsystems based on diamond. The contact resistance depends not only on the choice of metals but also on annealing, thickness and other parameters. Combination of titanium, platinum and gold (with co-deposited gold on top to prevent oxidation) are most widely used metals and yield good conductivy after beaing annealed.
Diamond films were grown by Microwave Plasma (MP) and Hot Filament Chemical Vapor Deposition (HF CVD) on the Si substrates. Electrical properties were studied on films with various surface morphology which were analyzed by SEM and AFM. Diamond layers from polycrystlline to nanocrystalline were changed by using different deposition condition which will be described in the contribution.
Lower-quality diamond films were less sensitive to variation in the operating conditions. The activation energies and other electrical parameters of the films depend on morphological parameters, as preferable grain size and/or orientacion.

---

back