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SnO2 thin films were deposited on the sapphire substrates with various orientations (a, m, c, r-cut) by rf magnetron sputtering using a tin dioxide target and plasma enhanced atomic layer deposition (PE-ALD) using a dibutyl tin diacetate (DBTA) ((CH3CO2)2Sn[(CH2)3-CH3]2). The films deposited by both methods are highly oriented, and the film orientations are strongly dependent on the substrate orientations such that (101), (002), and (101) oriented films were grown on (11-20) (a-cut), (10-10) (m-cut), and (1-102) (r-cut) Al2O3 substrates, respectively. X-ray pole figure indicated that these films are highly textured close to the epitaxial films. High resolution transmission electron microscopy (HR-TEM) analysis was performed to determine the in-plane orientation relationships. The epitaxial relationships between SnO2 films and sapphire substrates will be discussed based on the obtained results and structural parameters. |