Study on atomic layer deposition of TiO2 thin film growth using in-situ infrared spectroscopy
Kang, Byung-Chang; Boo, Jin-Hyo
Republic of Korea

Titanium dioxide (TiO2) thin films have a number of perspective applications in microelectronics and sensor technology. For adapt these good properties to many applications, the understanding of initial growth of the thin film on a substrate is very important. In this study, we constructed a simple ALD system combined with transmission FTIR technique and attempted to investigate the surface chemistry of TiO2 ALD. ALD of TiO2 thin film was carried out using alternating exposures of titanium isopropoxide (Ti(OiPr)4) and water (H2O) in the home-made simple ALD system in the range of 150 ?300 oC. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor the sequential surface chemistry during the Ti(OiPr)4and H2O exposures in vacuum. The FTIR spectra showed the growth of TiO2 bulk vibrational modes versus number of ALD cycles. Also transmission electron microscopy (TEM) was used to investigate the detail strcuture of the deposited TiO2thin film on the Si(100) substrate.
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