Effect of pressure change on physical properties of RF sputtered WO3 thin films
Riech, Ines; Acosta , Milenis; Peņa, Juan Luis; Alonso, Juan Carlos
Mexico

Tungsten trioxide films (WO3) have been recognized as electrochromic material and gas sensing properties. A set of WO3 films were prepared by rf sputtering from metal oxide target, with different deposition conditions on glass substrates. Operating argon pressure in the chamber was varied from 10 x10-3 Torr to 80 x 10-3 Torr. Taking into account that optical and electrical properties of thin films depend considerably on the operating pressure of the sputtering atmosphere, WO3 films were studied by optical transmission and resistivity measurements. Films with high spectral transmittance in the visible and near infrared regions and high resistivities were obtained for pressures upper than 50 x 10-3 Torr. Electronic structures were correlated with conductivity behavior of thin films. The chemical composition and type of bonding of the films were analyzed by XPS technique.
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