This paper describes the influence of a co-catalyst on growth of carbon nanotubes by Alcohol Catalytic Chemical Vapour Deposition (ACCVD) method, which is the one of most popular technology used for production of Carbon Nanotubes (CNT). Silicon wafers covered with thermal oxide were used as substrates. The catalyst was Ni thin film and the co-catalyst was one of Al, Cu and Ti. The catalysts films were deposited by Pulsed Laser Deposition Technique. Comparison of the various types of the co-catalyst (Al, Cu, Ti) leads to the conclusion that Cu co-catalyst is suitable for producing very thin single wall carbon nanotubes (SWCNT) and combination of Al and Ni provide a good condition to the catalytic grown of CNTs. In addition, we observed also the influence of the various diffusion barrier on growth of CNTs. One of the prepared samples had polycrystalline diamond layer instead thermal oxide serving as diffusion barrier between Si subtrate and catalysts films. We can also see the influence of surface roughness on growth of CNT. Prepared samples were analysed by Raman Spectroscopy (RS) and Scanning Electron Microscopy (SEM).
Keywords: Carbon Nanotubes, ACCVD, catalyst growth, SEM, Raman Spectroscopy |