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The experimental results of capacity and forward current dependencies on a temperature and voltage for Ni-n-GaN surface-barrier structures are present. The GaN epitaxial layes were fabricated on sapphire substrates, and had uncompensated donor concentration near to 1017cM-3, the electron mobility near 600 cm2V-1s-1 and dislocation density near to 3×108cM-2. Barrier contacts have been fabricated by electron beam evaporation of Ni/Au layers in high vacuum.
We determined that in the temperature range 250-410 K the forward current flow mechanism in surface-barrier structures Ni-n-GaN was electron thermofield emission conform to Padovani — Stratton theory.
On the basis of a comparison between the experimental data and the theory we have determined that the energy of electrons, crossing the potential barrier, is lower barrier height on ~0.1 eV.
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