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Polycrystalline CuInZnSe2 (CIZSe) thin films for solar cell applications were grown on Corning 1737 and sodalime glass by Radio Frequency (RF) Magnetron Sputtering from CuSe, InSe and ZnSe powders. CuSe and InSe powders with the same mole composition were initially mixed and employed as the sputtering targets for growing stoichiometric and single phase CuInSe2 thin films. ZnSe powders were added to the CuSe-InSe powder targets in order to yield CIZSe thin films with various Zn atomic concentrations. The dependences of films properties on the growth parameters of substrate temperature, RF power as well as Zn concentrations in the targets were investigated. Quantification by energy dispersive X-ray (EDX) shows that stoichiometric films could be obtained successfully at 2000C substrate temperature. X-ray diffraction (XRD) measurement shows CIZSe thin films were highly dominated by (112) orientation which reflects a chalcopyrite structure. Grain size of CIZSe thin films increases proportionally with the increasing of substrate temperature. The band gap of films could be adjusted from about 1 eV up to 1.3 eV by increasing Zn concentration in the films with an average absorption coefficient in the order of 104 cm-1. These results demonstrate that CIZSe thin film can be considered as a potential solar absorber material for photovoltaic cells with regards to its technological advantages. |