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Organic thin films have been deposited on polyimide substrates under the several condition such as different temperature and RF power by plasma enhanced chemical vapor deposition (PECVD) method using single molecular thiophene(C4H4S)precursors for Cu metallization after atmospheric plasma pre-treatment using N2 and O2 with Ar, respectively. Also, just atmospheric plasma pre-treated PI (poly-imide) films were used substrate for Cu-metallization without organic layer. In addition, Cu layer thickness was reinforced 8µm by electroplating after Cu seed layer was deposited about 200nm on the as-grown polymerized polyimide thin films by magnetron sputter system. The effects of thiophene polymer thin film and N2 or O2 plasma pre-treatment on the adhesion properties between Cu and polyimide were investigated by T-peel test. Peel strength was increased with increasing RF power and pre-treatment film. Also, we were analyzed surface morphology, surface energy, chemical composition, and functional group by FT-IR, XPS, SEM, contact angle, and AFM. |