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Nanoscaled films of metal nitrides due to their remarkable physical and chemical properties are intensively studied and applied in technology both as wear and corrosion resistant coatings and as functional films for novel electronic devices fabrication in modern semiconductor industry. Different methods of ion-plasma and ion-beam sputtering are widely used for deposition of thin nitrides films. During ion sputtering particles with energies from several to hundred eV, emitted by target, affecting on condensation surface strongly influence on the quality of growing film. The current work presents both theoretical and experimental study of low-current ion beam sputter deposition of nanoscaled films of metal nitrides. Ultra thin (~5 nm) TiN, Ti/TiN and CrN films were formed on silicon by sputtering of pure titanium and chromium target in nitrogen atmosphere using argon ions with energy of 5 keV and target current 15 µA. Elemental composition and chemical state of obtained films were investigated by X-ray photoelectron spectroscopy with using of Mg-Kα X-ray radiation (photon energy 1253.6 eV). The influence of thermal and vacuum conditions during sputtering and post deposition annealing on characteristics of obtained films were studied and will be presented.
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