Tunneling magnetoresitive (TMR) structures including Co magnetic domains in a dielectric matrix (MgO) can give a very high change of the electrical resistance in the presence of the magnetic field, property that can be used for memory devices and read head applications. Preparation of the TMR structures is based in this work on the properties of magnesium oxide (MgO) such as high electrical resistivity, good chemical resistance and good thermal stability.
For TMR thin film preparation was adopted the thermionic vacuum arc (TVA) method [1-2]. By this method the prepared film condenses in high vacuum conditions, the growing thin film being bombarded with the own ions of the just depositing material. The obtained films have high purity and compact structures.
The influence of the bombardment with energetic ions (with controlled intensity) generated in the vacuum evaporated ferromagnetic metal co-deposited with the insulator matrix evaporated from another crucible was studied, as well as the electrical characteristics, morphology and struc-tures of the prepared magnetoresisitve films. The methods used for characterization were: current in plane (CIP) magnetoresistivity, atomic force microscopy (AFM), magnetic force microscopy (MFM), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron spectroscopy (TEM).
References:
1. C. P. Lungu, I. Mustata, A. M. Lungu, O. Brinza, V. Zaroschi, V. Kuncser, G. Filoti, L. Ion: JOAM, 7, 2507 (2005).
2. V. Kuncser, I. Mustata, C. P. Lungu, A. M. Lungu, V. Zaroschi, W. Keune, B. Sahoo, F. Stromberg, M. Walterfang, L. Ion and G. Filoti, Surf and Coat. Techn, 200, 980 (2005).
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