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A solid state reaction has been reported at the interfaces Ti/Si system. Thin films of Ti (90nm) were deposited on Si (111) substrate by Ion Beam Sputtering (IBS) technique. For phase formation at the interface, annealing at temperatures 450, 550 and 700C in high vacuum was employed. Grazing Incidence X-ray Diffraction was used to characterize the samples before and after annealing. GIXRD results revealed a stable disilicide formation at the interface at highest annealing temperature. I – V characteristics were studied at high vacuum and at atmospheric pressure. Resistance, Schottky barrier height (SBH) and heat of formation of silicide were calculated using I-V curves. It is found that the SBH values are the function of heat of formation of silicide. |