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Diluted magnetic semiconductor has received the most attention as spin injector materials for spintronics. The Co-doped ZnO films with single crystal structure were deposited on Al2O3 (001) wafer by an efficient and low cost method, i.e., direct current reactive magnetron co-sputtering. The influence of the deposition conditions on the local Co structure, magnetic, and electric properties of Co:ZnO films has been carefully investigated. The experimental results indicate that low oxygen partial pressure, high deposition rate and low substrate temperature can enhance the semiconductor character of the Co:ZnO films. While low deposition rate and high substrate temperature are favorable to the epitaxial growth of the single crystal structure. An optimum electron concentrations, the resistivity, and the magnetic moment of Zn0.94Co0.06O films are 5.2exp(19) cm-3, 0.017Ω•cm and 0.91μB /Co, respectively, in our experimental conditions. |