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We describe the design and construction of an optimized ion-atom beam source for ion beam assisted - molecular beam epitaxy in ultrahigh vacuum.
The device combines an effusion cell and electron impact ion source and produces mixed atom and ion beams, with ion energies of about 100 eV.
The source was successfully used in the growth of Ga/N layers on Si (111)-7x7 surfaces by ion beam assisted deposition at temperatures significantly lower (RT, 400 °C) than in conventional technologies (e.g. MOCVD, 1000 ° C) . The morphology and elemental composition of these films were characterized using atomic force microscopy (AFM), and X-Ray Photo Emission Spectroscopy (XPS).
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