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RuO2 - SiO2 thin films have been prepared by an aerosol CVD process at atmospheric pressure with substrate temperatures ranging from 425 to 550°C. The used precursors were di-acetoxi di-butoxi silane (DADBS) and Ruthenium (III) acetylacetonate. The morphological and structural properties of grown RuO2 - SiO2 films were analysed by scanning electron microscopy (SEM), Raman spectroscopy and x-ray diffraction. The deposited films at temperature varying between 425 and 480°C exhibited a good adherence and a flat and uniform surface which led to a high mirror optical reflection effect. In contrary films deposited at temperature higher than 500°C revealed low adherence, a diffusive visual aspect, a large roughness and a non uniform morphology. As analysed by Raman spectroscopy and x-ray diffraction, the deposited films were an amorphous or quasi amorphous crystallisation degree. The film composition has been determined by two techniques: electron probe microanalysis X (EPMA) and Rutherford backscattering spectrometry (RBS). According to the deposition conditions, the content of RuO2 in films varies between 50% and 82%. The electrical properties have been analysed by four probe method and the results have been discussed versus the deposition parameters and the film composition.
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