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The growth of textured aluminium nitride (AlN) films has been utilized for the needs of the electroacoustic (EA) technology. This technology offers high performance microwave components for telecommunications. The expected benefit of Integrated Circuit (IC) compatibility is currently under development. Development of IC compatible materials for the electrode in thin film electroacoustic (TEA) technology is needed. Nickel silicide, widely used in microelectronics, is an attractive candidate for electrode replacement in view of promoting IC compatibility of the TEA technology. Here a complete optimization process has been developed for the formation of 300 nm thick stoichiometric nickel silicides on Si (111) wafers. The use of a multilayer structure has brought improvements in silicide resistivity and a decrease in surface roughness from 9.5 nm to 1 nm. Growth of textured AlN on the prepared silicides is investigated with a corresponding improvement observed for smoother surfaces, 7.7 o to 3.5 o full width half maximum (FWHM) of the rocking curve respectively. Benefits and future trends are outlined. |