|
Thin copper oxide films were fabricated by using magnetron sputtering with post-annealing. Copper thin films were firstly deposited on slide glass substrate using sputtering. The resultant films were (111) preferred orientation. The films were then annealed in air at 250-400°C for 2 to 8 h. The annealed films became transparent in all annealing temperatures. Raman peaks were located ~220 cm-1 and ~300 cm-1, which are attributed to cuprous oxide and cupric oxide, respectively. The Raman spectra indicate that the annealed films are mixed phases. The uniform nano-granular feather with several nanometers was observed on the surface. The deduced optical band gap was ranged from 2.14 to 2.32 eV, which are between the values of cuprous oxide and cupric oxide. The oxide film microstructure correlates to the optical and electrical properties is further investigated. |