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It has been reported that the control of oxide formation on semiconductor surface at atomic scale is of great importance for technical applications to electronic devices. The interaction of oxygen molecules with silicon surfaces has emerged as a case study. In this presentation, we elucidate the behavior of oxidation at the very initial state using Scanning Tunneling Microscopy. The new adsorption feature was generated by the adsorption of oxygen and the population increased linearly with the oxygen dosage. There is no site preference of oxidation of defects (C, 1DV and 1+2 DV). The reason of the feature is that the silicon molecule was ejected from the surface during the initial oxidation reaction. These results and features were confirmed using theoretical calculation. |