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We intended to passivate by atomic hydrogen, massively parallel one-dimensional (1D) Si nanowires (NWs) grown on a Ag(110) substrate
Experiments were performed both in Marseille, by High Resolution Electron Energy Loss Spectroscopy (HREELS), Low Energy Electron Diffraction (LEED), Scanning Tunneling Microscopy (STM) and in in the synchrotron of Max Laboratory in Lund for Core Level X-Ray Photoemission Spectroscopy (XPS).
Mono-oriented Si nanowires were prepared by Si submonolayer deposition on Ag(110).
From the earliest stages of H exposure at room temperature, HREELS reveals the formation of di-hydride (or higher hydrides) silicon bonds.
With increasing H dosing, the 2xn LEED superstructures related to the Si nanowires quickly vanish until the 1x1 LEED pattern of the clean silver surface is obtained. STM demonstrate that the structure of the Si nanowires is strongly altered by H interaction, the nanowires becoming fragmented.
XPS performed in the synchrotron of Max Laboratory in Lund, demonstrate
the apparition of a new Si2p core level peak which energy position closely mathch those of bare bulk silicon. At relatively high dose of atomic H exposure, all the Si2p core level peaks eventually disappear, demonstrating that the Si has been completely removed from the Ag(110) surface.
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