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Electrical characteristics of Au Schottky contacts fabricated on n-GaN treated in HCl, pirhana and (NH4)2S have been investigated using current-voltage (I-V) and capacitance voltage (C-V) techniques. AES and XPS results show that the surface cleaned in (NH4)2S has lowest surface oxide. Consequently, the series resistance on this surface was lowest, ranging between 0 and 20 ohms. The C-V barrier height of the diodes was approximately 1.1 eV and the ideality factor was about 2. The C-V barrier height of HCl etched diodes 1.2 eV and that of diodes cleaned in pirhana was about 1.3 eV.
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